Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an InxGa1-xN/GaN double heterostructure
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Abstract
We report a study of the carrier dynamics in an In0.18Ga0.82N thin film photoexcited well above the band gap using nondegenerate pump-probe spectroscopy and time-resolved photoluminescence (TRPL) for carrier densities ranging from 1017 to 1019 cm-3 at 10 K. At carrier densities greater than 4×1018 cm-3, optical gain occurs across the entire band tail region after ∼2.5 ps time delay, when the hot carriers completely fill these states. From TRPL measurements performed in the surface emission geometry, we observed stimulated emission (SE) with a ∼28 ps decay time. Since this SE has a threshold density of 1×1018 cm-3, which is larger than the total density of localized states, and the SE spectra at early time delays are quite different from the spontaneous emission spectra, we attribute the SE to the recombination of an electron-hole plasma from renormalized band-to-band transitions.
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Choi</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Little, B D" uniqKey="Little B">B. D. Little</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Kwon, Y H" uniqKey="Kwon Y">Y. H. Kwon</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Lam, J B" uniqKey="Lam J">J. B. Lam</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Song, J J" uniqKey="Song J">J. J. Song</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Chang, Y C" uniqKey="Chang Y">Y. C. Chang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Keller, S" uniqKey="Keller S">S. Keller</name></author><author><name sortKey="Mishra, U K" uniqKey="Mishra U">U. K. Mishra</name></author><author><name sortKey="Denbaars, S P" uniqKey="Denbaars S">S. P. Denbaars</name></author></titleStmt><publicationStmt><idno type="inist">01-0199833</idno><date when="2001-05-15">2001-05-15</date><idno type="stanalyst">PASCAL 01-0199833 AIP</idno><idno type="RBID">Pascal:01-0199833</idno><idno type="wicri:Area/Main/Corpus">011421</idno><idno type="wicri:Area/Main/Repository">010160</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Experimental study</term><term>Gallium compounds</term><term>Hot carriers</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Optical pumping</term><term>Photoluminescence</term><term>Semiconductor heterojunctions</term><term>Semiconductor plasma</term><term>Stimulated emission</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7847</term><term>7220J</term><term>7135L</term><term>Etude expérimentale</term><term>Semiconducteur III-V</term><term>Indium composé</term><term>Gallium composé</term><term>Hétérojonction semiconducteur</term><term>Densité porteur charge</term><term>Pompage optique</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Porteur chaud</term><term>Emission stimulée</term><term>Plasma semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a study of the carrier dynamics in an In<sub>0.18</sub>Ga<sub>0.82</sub>N thin film photoexcited well above the band gap using nondegenerate pump-probe spectroscopy and time-resolved photoluminescence (TRPL) for carrier densities ranging from 10<sup>17</sup> to 10<sup>19</sup> cm<sup>-3</sup> at 10 K. At carrier densities greater than 4×10<sup>18</sup> cm<sup>-3</sup>, optical gain occurs across the entire band tail region after ∼2.5 ps time delay, when the hot carriers completely fill these states. From TRPL measurements performed in the surface emission geometry, we observed stimulated emission (SE) with a ∼28 ps decay time. Since this SE has a threshold density of 1×10<sup>18</sup> cm<sup>-3</sup>, which is larger than the total density of localized states, and the SE spectra at early time delays are quite different from the spontaneous emission spectra, we attribute the SE to the recombination of an electron-hole plasma from renormalized band-to-band transitions.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>63</s2></fA05><fA06><s2>19</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an In<sub>x</sub>Ga<sub>1-x</sub>N/GaN double heterostructure</s1></fA08><fA11 i1="01" i2="1"><s1>CHOI (C. K.)</s1></fA11><fA11 i1="02" i2="1"><s1>LITTLE (B. D.)</s1></fA11><fA11 i1="03" i2="1"><s1>KWON (Y. H.)</s1></fA11><fA11 i1="04" i2="1"><s1>LAM (J. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>SONG (J. J.)</s1></fA11><fA11 i1="06" i2="1"><s1>CHANG (Y. C.)</s1></fA11><fA11 i1="07" i2="1"><s1>KELLER (S.)</s1></fA11><fA11 i1="08" i2="1"><s1>MISHRA (U. K.)</s1></fA11><fA11 i1="09" i2="1"><s1>DENBAARS (S. P.)</s1></fA11><fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078-0444</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080</s1></fA14><fA14 i1="03"><s1>Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s2>195302-195302-7</s2></fA20><fA21><s1>2001-05-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0199833</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report a study of the carrier dynamics in an In<sub>0.18</sub>Ga<sub>0.82</sub>N thin film photoexcited well above the band gap using nondegenerate pump-probe spectroscopy and time-resolved photoluminescence (TRPL) for carrier densities ranging from 10<sup>17</sup> to 10<sup>19</sup> cm<sup>-3</sup> at 10 K. At carrier densities greater than 4×10<sup>18</sup> cm<sup>-3</sup>, optical gain occurs across the entire band tail region after ∼2.5 ps time delay, when the hot carriers completely fill these states. From TRPL measurements performed in the surface emission geometry, we observed stimulated emission (SE) with a ∼28 ps decay time. Since this SE has a threshold density of 1×10<sup>18</sup> cm<sup>-3</sup>, which is larger than the total density of localized states, and the SE spectra at early time delays are quite different from the spontaneous emission spectra, we attribute the SE to the recombination of an electron-hole plasma from renormalized band-to-band transitions.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H47</s0></fC02><fC02 i1="02" i2="3"><s0>001B70B20J</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A35</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7847</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7220J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7135L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Densité porteur charge</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Carrier density</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Pompage optique</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Optical pumping</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Time resolved spectra</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Porteur chaud</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Hot carriers</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Emission stimulée</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Stimulated emission</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Plasma semiconducteur</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor plasma</s0></fC03><fN21><s1>134</s1></fN21><fN47 i1="01" i2="1"><s0>0119M001211</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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